| US 7,485,972 B2 | ||
| Semiconductor device | ||
| Teruhisa Ikuta, Nara (Japan); Hiroyoshi Ogura, Kyoto (Japan); Yoshinobu Sato, Toyama (Japan); Toru Terashita, Toyama (Japan); and Hisao Ichijo, Kyoto (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Filed on Feb. 17, 2006, as Appl. No. 11/356,144. | ||
| Claims priority of application No. 2005-043292 (JP), filed on Feb. 21, 2005. | ||
| Prior Publication US 2006/0202240 A1, Sep. 14, 2006 | ||
| Int. Cl. H01L 23/12 (2006.01) | ||
| U.S. Cl. 257—784 [257/786] | 8 Claims |
| 1. A semiconductor device, comprising:
a semiconductor substrate of a first conduction type
a diffusion layer of a second conduction type on an inside surface portion of the semiconductor substrate, the second conduction
type being an opposite of the first conduction type;
an insulating film on a surface of said substrate and said diffusion layer, and
a conductive bonding pad on said insulating film, above said diffusion layer, the horizontal edges of said conductive bonding
pad extending beyond the horizontal edges of said diffusion layer of the second conduction type, thereby diminishing electric
fields at ends of the diffusion layer and improving a breakdown voltage of a PN junction at a boundary of the diffusion layer
and the semiconductor substrate,
wherein a diffusion layer of the second conduction type is not formed on a surface region of the semiconductor substrate directly
under a horizontal edge of the bonding pad, the surface region being the semiconductor substrate of a first conduction type
that extends continuously from a PN junction of the diffusion layer.
|