| US 7,485,963 B2 | ||
| Use of supercritical fluid for low effective dielectric constant metallization | ||
| Satyavolu S. Papa Rao, Garland, Tex. (US); Stephan Grunow, Dallas, Tex. (US); and Phillip D. Matz, McKinney, Tex. (US) | ||
| Assigned to Texas Instruments Incorporated, Dallas, Tex. (US) | ||
| Filed on Dec. 21, 2006, as Appl. No. 11/614,094. | ||
| Application 11/614094 is a division of application No. 10/902243, filed on Jul. 28, 2004, granted, now 7,179,747. | ||
| Prior Publication US 2007/0102821 A1, May 10, 2007 | ||
| Int. Cl. H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01) | ||
| U.S. Cl. 257—758 [257/E23.145; 257/E23.144; 257/E23.167; 257/E21.581; 257/E21.252; 257/E21.002; 438/253; 438/396] | 24 Claims |
| 1. An integrated circuit comprising:
a semiconductor substrate;
a front-end structure coupled to said semiconductor substrate, said front-end structure having a pre-metal dielectric layer;
and
a back-end structure coupled to said front-end structure, said back-end structure having a first metal level, said first metal
level including metal interconnects and an inter-metal dielectric layer, said back-end structure further containing an extraction
line and a denuded dielectric region coupled to said extraction line.
|