| US 7,485,949 B2 | ||
| Semiconductor device | ||
| Chung-Chi Ko, Nantou (Taiwan); Chia-Cheng Chou, Keelung (Taiwan); Zhen-Cheng Wu, Hsinchu (Taiwan); Keng-Chu Lin, Pingtung (Taiwan); and Shwang-Ming Jeng, Hsinchu (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (Taiwan) | ||
| Filed on May 02, 2007, as Appl. No. 11/797,310. | ||
| Prior Publication US 2008/0272493 A1, Nov. 06, 2008 | ||
| Int. Cl. H01L 23/58 (2006.01) | ||
| U.S. Cl. 257—646 [257/635; 257/637] | 17 Claims |
| 1. A semiconductor device, comprising:
a substrate;
a first porous SiCOH dielectric layer overlying the substrate;
a second porous SiCOH dielectric layer overlying the first porous SiCOH dielectric layer; and
an oxide layer overlying the second porous SiCOH dielectric layer; wherein the atomic percentage of carbon in the second porous
SiCOH dielectric layer is between 16% and 22% of that in the first porous SiCOH dielectric layer.
|