| US 7,485,940 B2 | ||
| Guard ring structure for improving crosstalk of backside illuminated image sensor | ||
| Tzu-Hsuan Hsu, Kaohsiung (Taiwan); Shou-Gwo Wuu, Hsin-Chu (Taiwan); and Dun-Nian Yaung, Taipei (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (Taiwan) | ||
| Filed on Jan. 24, 2007, as Appl. No. 11/626,757. | ||
| Prior Publication US 2008/0173963 A1, Jul. 24, 2008 | ||
| Int. Cl. H01L 31/00 (2006.01); H01L 23/28 (2006.01) | ||
| U.S. Cl. 257—447 [257/460; 257/787] | 19 Claims |
| 1. A backside illuminated semiconductor device, comprising:
a substrate having a front surface and a back surface;
a plurality of sensor elements formed in the substrate, each of the plurality of sensor elements designed and configured to
receive light directed towards the back surface; and
a sensor isolation feature formed in the substrate, and disposed horizontally between two adjacent sensor elements of the
plurality of sensor elements, and vertically between the back surface and the front surface.
|