| US 7,485,929 B2 | ||
| Semiconductor-on-insulator (SOI) strained active areas | ||
| Hao-Yu Chen, Kaohsiung (Taiwan); and Fu-Liang Yang, Hsin-Chu (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu (Taiwan) | ||
| Filed on Sep. 15, 2006, as Appl. No. 11/522,282. | ||
| Application 11/522282 is a division of application No. 11/089403, filed on Mar. 23, 2005, granted, now 7,125,759. | ||
| Prior Publication US 2007/0010048 A1, Jan. 11, 2007 | ||
| Int. Cl. H01L 27/12 (2006.01) | ||
| U.S. Cl. 257—351 [257/E21.321] | 23 Claims |
| 1. Strained active areas with differential strain for forming strained channel semiconductor devices comprising:
a semiconductor substrate comprising a lower semiconductor region, an insulator region overlying the lower semiconductor region
and upper semiconductor region portions overlying the insulator region;
differentially strained NMOS and PMOS active regions comprising respective portions of the upper semiconductor region;
an inert dopant region comprising the insulator region disposed underlying the NMOS active region, said inert dopant region
comprising inert dopants selected from the group consisting of nitrogen, hydrogen, and helium;
wherein recessed areas comprising the insulator region are disposed adjacently either side of the PMOS active region.
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