| US 7,485,918 B2 | ||
| Semiconductor device and method for manufacturing the same | ||
| Akihito Yamamoto, Naka-gun (Japan); and Yoshio Ozawa, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on May 07, 2007, as Appl. No. 11/797,670. | ||
| Claims priority of application No. 2006-130340 (JP), filed on May 09, 2006. | ||
| Prior Publication US 2007/0262372 A1, Nov. 15, 2007 | ||
| Int. Cl. H01L 29/788 (2006.01) | ||
| U.S. Cl. 257—315 [438/257] | 20 Claims |
| 1. A semiconductor device comprising:
a gate dielectric film provided on at least one site on a surface of a semiconductor substrate;
at least one first gate electrode provided on the gate dielectric film;
an inter-electrode dielectric film provided while covering a surface of the first gate electrode, at least partial film thickness
of a portion covering a portion other than a corner portion that does not come into contact with the gate dielectric film
from among a plurality of corner portions of the first gate electrode being formed to be smaller than at least partial film
thickness of a portion covering the corner portion that does not come into contact with the gate dielectric film; and
a second gate electrode provided while covering a surface of the inter-electrode dielectric film.
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