| US 7,485,912 B2 | ||
| Flexible metal-oxide-metal capacitor design | ||
| Chien-Jung Wang, Hsin-Chu (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (Taiwan) | ||
| Filed on Mar. 28, 2006, as Appl. No. 11/391,064. | ||
| Prior Publication US 2007/0235838 A1, Oct. 11, 2007 | ||
| Int. Cl. H01L 27/108 (2006.01); H01L 29/94 (2006.01) | ||
| U.S. Cl. 257—307 [257/306; 257/532; 257/E27.048; 438/399] | 21 Claims |
| 1. A capacitor structure comprising:
a first bus comprising a first leg in a first direction and a second leg in a second direction;
a second bus electrically insulated from the first bus, wherein the first bus and the second bus are in a first metallization
layer;
first fingers connected to the first bus, wherein the first fingers are parallel to each other and have a longitudinal axis
that forms an acute angle with the first leg, and wherein some of the first fingers are connected to the first bus at the
first leg and others of the first fingers are connected to the first bus at the second leg; and
second fingers connected to the second bus, wherein the second fingers are parallel to each other and parallel to the first
fingers, and wherein the first fingers and the second fingers are placed in an alternating pattern and separated by a dielectric
material;
wherein the first fingers act as a first capacitor plate for the capacitor and the second fingers act as a second capacitor
plate for the capacitor.
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