| US 7,485,905 B2 | ||
| Electrostatic discharge protection device | ||
| Feng-Chi Hung, Zhubei (Taiwan); Jian-Hsing Lee, Hsinchu (Taiwan); Hung-Lin Chen, Pingtung (Taiwan); and Deng-Shun Chang, Kaohsiung (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (Taiwan) | ||
| Filed on Jul. 25, 2006, as Appl. No. 11/459,650. | ||
| Prior Publication US 2008/0023766 A1, Jan. 31, 2008 | ||
| Int. Cl. H01L 29/80 (2006.01); H01L 21/336 (2006.01) | ||
| U.S. Cl. 257—272 [257/273; 257/305; 257/307; 257/E29.174; 257/E29.176; 257/E27.015; 257/E27.017; 257/E27.109; 257/E21.619; 438/305; 438/307] | 18 Claims |
| 1. An electrostatic discharge protection device, comprising:
a multi-finger gate comprising a plurality of fingers mutually connected in parallel over an active region of a first conductivity;
a first lightly doped region of a second conductivity in the active region between two of the fingers;
a first heavily doped region of the second conductivity disposed in the first lightly doped region of the second conductivity;
a second lightly doped region of the second conductivity beneath and adjoining the first lightly doped region of the second
conductivity; and
two second heavily doped regions of the second conductivity disposed in the semiconductor substrate, wherein the fingers are
located between the two second heavily doped regions of the second conductivity.
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