| US 7,485,902 B2 | ||
| Nitride-based semiconductor light-emitting device | ||
| Daijiro Inoue, Kyoto (Japan); Yasuhiko Nomura, Moriguchi (Japan); Masayuki Hata, Kadoma (Japan); Takashi Kano, Hirakata (Japan); and Tsutomu Yamaguchi, Nara (Japan) | ||
| Assigned to Sanyo Electric Co., Ltd., Osaka (Japan) | ||
| Filed on Sep. 17, 2003, as Appl. No. 10/663,714. | ||
| Claims priority of application No. 2002-271968 (JP), filed on Sep. 18, 2002. | ||
| Prior Publication US 2004/0061119 A1, Apr. 01, 2004 | ||
| Int. Cl. H01L 27/15 (2006.01) | ||
| U.S. Cl. 257—103 [257/98; 257/744; 257/745; 257/E33.005; 257/E33.028; 257/E33.064] | 22 Claims |
| 1. A nitride-based semiconductor light-emitting device comprising:
a first conductivity type first nitride-based semiconductor layer formed on a substrate;
an active layer, formed on said first nitride-based semiconductor layer;
a first undoped optical guide layer formed on said active layer;
a second conductivity type second nitride-based semiconductor layer, having a single layer structure with a thickness of at
least 0.1 μm, formed on said first undoped optical guide layer;
an undoped contact layer formed directly on said second nitride-based semiconductor layer; and
an electrode formed directly on said undoped contact layer, wherein
said undoped contact layer consists of a nitride-based semiconductor and has a single-layer structure and a thickness of at
least about 1 nm and not more than about 10 nm, and the undoped contact layer does not include Al.
|