| US 7,485,575 B2 | ||
| Method of manufacturing semiconductor device | ||
| Yoshiharu Hidaka, Takatsuki (Japan); and Etsuro Kishio, Kyoto (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Filed on Feb. 10, 2005, as Appl. No. 11/53,838. | ||
| Claims priority of application No. 2004-036691 (JP), filed on Feb. 13, 2004. | ||
| Prior Publication US 2005/0191853 A1, Sep. 01, 2005 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—660 [438/799; 257/E21.588; 257/E21.496] | 7 Claims |
| 1. A method of manufacturing a semiconductor device, comprising the steps of:
forming recesses in an insulating film on a semiconductor substrate;
burying a metal film in the recesses by plating using a plating solution containing additives;
removing the additives included in the metal film by heat treating the metal film; and
removing the metal film adhering to the insulation film to leave the metal film only in the recesses, wherein;
the heat treatment is conducted by inserting the semiconductor substrate into a heat treatment apparatus at an introducing
temperature of 20° C. to 50° C., heating the semiconductor substrate to a desired heat-treating temperature, and holding the
semiconductor subtrate at the desired heat-treating temperature for 30 to 120 minutes.
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