| US 7,485,554 B2 | ||
| Method of increasing a free carrier concentration in a semiconductor substrate | ||
| Gyoung Ho Buh, Suwon-si (Korea, Republic of); Ji-Sang Yahng, Seoul-si (Korea, Republic of); Yu Gyun Shin, SungNam-si (Korea, Republic of); Guk-Hyon Yon, Suwon-si (Korea, Republic of); and Sangjin Hyun, Kwachon-si (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Jan. 22, 2007, as Appl. No. 11/655,916. | ||
| Application 11/655916 is a division of application No. 10/845589, filed on May 14, 2004, granted, now 7,176,049. | ||
| Claims priority of application No. 2003-65686 (KR), filed on Sep. 22, 2003. | ||
| Prior Publication US 2007/0117250 A1, May 24, 2007 | ||
| Int. Cl. H01L 21/26 (2006.01); H01L 21/42 (2006.01) | ||
| U.S. Cl. 438—535 [438/57; 257/E21.133; 257/E21.347; 257/E21.134; 257/E21.135] | 13 Claims |
| 1. A method of selectively heating a predetermined region of a semiconductor substrate, comprising:
a. providing a semiconductor substrate;
b. aligning a mask above the semiconductor substrate to expose the predetermined region of the semiconductor substrate;
c. performing a doping process on the exposed predetermined region of the semiconductor substrate; and
d. irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor
substrate, a wavelength of the heating light being longer than a wavelength corresponding to a bandgap energy of the semiconductor
substrate.
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