| US 7,485,553 B2 | ||
| Process for manufacturing a semiconductor device | ||
| Shunpei Yamazaki, Setagaya (Japan); Hisashi Ohtani, Atsugi (Japan); Toru Mitsuki, Atsugi (Japan); Hideto Ohnuma, Atsugi (Japan); Tamae Takano, Atsugi (Japan); Kenji Kasahara, Atsugi (Japan); and Koji Dairiki, Atsugi (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (Japan) | ||
| Filed on Oct. 16, 2006, as Appl. No. 11/580,938. | ||
| Application 11/580938 is a division of application No. 10/098153, filed on Mar. 15, 2002, granted, now 7,122,450. | ||
| Claims priority of application No. 2001-075376 (JP), filed on Mar. 16, 2001. | ||
| Prior Publication US 2007/0032049 A1, Feb. 08, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/20 (2006.01); H01L 21/36 (2006.01) | ||
| U.S. Cl. 438—486 [257/E21.497] | 20 Claims |
| 1. A method of manufacturing a semiconductor device comprising:
providing an amorphous semiconductor film comprising silicon with a metal containing material for promoting crystallization
of silicon;
crystallizing the amorphous semiconductor film provided with the metal containing material;
forming a barrier layer on the crystallized semiconductor film;
forming a second semiconductor film containing a rare gas element on the barrier layer;
heating a gas in a first chamber;
introducing the heated gas from the first chamber to a second chamber connected to the first chamber;
heating the crystallized semiconductor film and the second semiconductor film formed on the barrier layer with the heated
gas in the second chamber so that the metal contained in the crystallized semiconductor film moves into the second semiconductor
film through the barrier layer; and
removing the second semiconductor film.
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