| US 7,485,552 B2 | ||
| Thin film transistor and method of fabricating the same | ||
| Byoung-Keon Park, Incheon-si (Korea, Republic of); Ki-Yong Lee, Yongin-si (Korea, Republic of); Jin-Wook Seo, Suwon-si (Korea, Republic of); and Tae-Hoon Yang, Seongnam-si (Korea, Republic of) | ||
| Assigned to Samsung Mobile Display Co., Ltd., Suwon (Korea, Republic of) | ||
| Filed on Jan. 11, 2006, as Appl. No. 11/329,290. | ||
| Application 11/329290 is a division of application No. 11/017673, filed on Dec. 22, 2004, granted, now 7,247,880. | ||
| Claims priority of application No. 2004-52693 (KR), filed on Jul. 07, 2004. | ||
| Prior Publication US 2006/0121651 A1, Jun. 08, 2006 | ||
| Int. Cl. H01L 21/20 (2006.01); H01L 21/36 (2006.01) | ||
| U.S. Cl. 438—486 [438/923; 257/64; 257/E29.003] | 25 Claims |
| 1. A method of fabricating a thin film transistor, comprising:
forming an amorphous silicon layer on a substrate;
forming a capping layer on the amorphous silicon layer such that seeds are formed in a line shape, the capping layer comprising
a metal catalyst diffusible portion and a metal catalyst non-diffusible portion;
forming a metal catalyst layer on the capping layer;
diffusing the metal catalyst through the capping layer; and
crystallizing and patterning the amorphous silicon layer to form a semiconductor layer pattern,
wherein the metal catalyst diffusible portion of the capping layer is part of a layer that is formed to cover an entire region
of the amorphous silicon layer that includes the semiconductor layer pattern.
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