| US 7,485,547 B2 | ||
| Method of fabricating semiconductor device | ||
| Megumi Yamamura, Hyogo-ken (Japan); Toshihide Shimmei, Hyogo-ken (Japan); and Tetsuya Kaji, Hyogo-ken (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jan. 25, 2005, as Appl. No. 11/41,697. | ||
| Claims priority of application No. 2004-138689 (JP), filed on May 07, 2004. | ||
| Prior Publication US 2005/0250296 A1, Nov. 10, 2005 | ||
| Int. Cl. H01L 21/78 (2006.01); H01L 21/46 (2006.01); H01L 21/301 (2006.01) | ||
| U.S. Cl. 438—460 [438/458; 438/459; 438/464] | 16 Claims |
| 1. A method of fabricating a semiconductor device, comprising:
sticking a first protective tape on a first surface of a semiconductor substrate;
polishing a second surface of the semiconductor substrate faced to the first surface;
sticking a second protective tape on the second surface of the semiconductor substrate;
removing the first protective tape;
dicing the semiconductor substrate from the first surface side to separate the semiconductor substrate to a plurality of semiconductor
chips;
sticking a third protective tape on first surfaces of a plurality of the semiconductor chips;
removing the second protective tape; and
etching cutting surfaces of the semiconductor chips and second surfaces of the semiconductor chips by dry etching,
wherein a surface roughness Rs of the second surface of the semiconductor chips formed by dry etching is 0.05 μm or more and
0.4 μm or less.
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