| US 7,485,539 B2 | ||
| Strained semiconductor-on-insulator (sSOI) by a simox method | ||
| Thomas N. Adam, Poughkeepsie, N.Y. (US); Stephen W. Bedell, Wappingers Falls, N.Y. (US); Joel P. de Souza, Putnam Valley, N.Y. (US); Keith E. Fogel, Hopewell Junction, N.Y. (US); Alexander Reznicek, Mount Kisco, N.Y. (US); Devendra K. Sadana, Pleasantville, N.Y. (US); and Ghavam Shahidi, Pound Ridge, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Jan. 13, 2006, as Appl. No. 11/332,564. | ||
| Prior Publication US 2007/0164356 A1, Jul. 19, 2007 | ||
| Int. Cl. H01L 21/76 (2006.01) | ||
| U.S. Cl. 438—370 [438/413; 438/416; 438/423; 257/E21.561; 257/E21.563] | 7 Claims |
| 1. A method of fabricating a strained semiconductor-on-insulator (sSOI) material comprising:
forming a metastable, tensile strained semiconductor material beyond its critical thickness on a surface of a graded semiconductor
buffer layer, said graded semiconductor buffer layer having a larger in-plane lattice constant than said tensile strained
semiconductor material, wherein the metastable, tensile strained semiconductor material is grown with an epitaxial growth
process at a temperature of less than about 700° C. to a thickness of approximately 50 nm or greater;
implanting oxygen ions into at least said tensile strained semiconductor material to form a structure including an oxygen
ion enriched region therein; and
annealing said structure to convert said oxygen ion enriched region into a buried oxide region.
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