| US 7,485,511 B2 | ||
| Integrated circuit device and method for manufacturing integrated circuit device | ||
| Daiki Yamada, Isehara (Japan); Yoshitaka Dozen, Isehara (Japan); Eiji Sugiyama, Atsugi (Japan); and Hidekazu Takahashi, Isehara (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (Japan) | ||
| Filed on May 25, 2006, as Appl. No. 11/440,128. | ||
| Claims priority of application No. 2005-161413 (JP), filed on Jun. 01, 2005. | ||
| Prior Publication US 2006/0275960 A1, Dec. 07, 2006 | ||
| Int. Cl. H01L 21/84 (2006.01) | ||
| U.S. Cl. 438—160 [438/459; 257/E21.122] | 21 Claims |
| 1. A method for manufacturing an integrated circuit device comprising:
forming a stacked body including a first insulating film, a thin film circuit formed over a surface of the first insulating
film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and
a resin film formed over the electrode;
forming a conductive film adjacent to a back surface of the first insulating film to be overlapped with the electrode; and
irradiating the conductive film with a laser to electrically connect the conductive film to the electrode through the first
insulating film, the thin film circuit and the second insulating film.
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