| US 7,485,485 B2 | ||
| Method and apparatus for making a MEMS scanner | ||
| Kelly D. Linden, Lynnwood, Wash. (US); Mark P. Helsel, Seattle, Wash. (US); Dean R. Brown, Lynnwood, Wash. (US); Randall B. Sprague, Carnation, Wash. (US); and Wyatt O. Davis, Bothell, Wash. (US) | ||
| Assigned to Microvision, Inc., Redmond, Wash. (US) | ||
| Filed on Nov. 12, 2004, as Appl. No. 10/986,635. | ||
| Claims priority of provisional application 60/571133, filed on May 14, 2004. | ||
| Claims priority of provisional application 60/542896, filed on Feb. 09, 2004. | ||
| Prior Publication US 2005/0173770 A1, Aug. 11, 2005 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—48 [438/45; 438/52; 438/53; 438/735; 257/E21.002] | 13 Claims |
| 1. A method for manufacturing semiconductor devices; comprising:
deep etching outlines of a plurality of interdigitated shapes in a semiconductor wafer, the interdigitated shapes comprising
a MEMS device having a first resonant frequency during operation;
doping the semiconductor wafer with phosphorus to allow a conduit for joule heating of the semiconductor wafer to cause the
MEMS device to have a second resonant frequency in response to the joule heating; and
removing the plurality of interdigitated shapes from the semiconductor wafer to produce a plurality of semiconductor devices
having irregular outlines.
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