| US 7,485,478 B2 | ||
| Light emitting device and method of manufacturing the same | ||
| Hirokazu Yamagata, Kanagawa (Japan); Shunpei Yamazaki, Tokyo (Japan); and Toru Takayama, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken (Japan) | ||
| Filed on Aug. 07, 2007, as Appl. No. 11/890,494. | ||
| Application 11/890494 is a division of application No. 10/073284, filed on Feb. 13, 2002, granted, now 7,264,979. | ||
| Claims priority of application No. 2001-041195 (JP), filed on Feb. 19, 2001. | ||
| Prior Publication US 2007/0290219 A1, Dec. 20, 2007 | ||
| Int. Cl. H01L 29/43 (2006.01) | ||
| U.S. Cl. 438—22 [438/26; 438/115; 257/E33.063] | 30 Claims |
| 1. A method of manufacturing a light emitting device comprising:
forming a thin film transistor on an insulator;
forming an interlayer insulating film on the thin film transistor;
forming a first insulating film on the interlayer insulating film by plasma treatment;
forming an anode on the first insulating film;
forming a wiring for electrically connecting the thin film transistor to the anode;
forming a bank over the first insulating film, edge portions of the anode, and the wiring;
forming a second insulating film on the anode and the bank;
forming an organic compound layer over the anode with the second insulating film interposed therebetween; and
forming a cathode on the organic compound layer,
wherein the first insulating film is a cured film and comprises one or more kinds of gas elements selected from the group
consisting of hydrogen, nitrogen, halogenated carbon, hydrogen fluoride, and rare gas.
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