US 7,485,279 B2
	Growth of nanostructures with controlled diameter
Lisa Pfefferle, Branford, Conn. (US); Gary Haller, New Haven, Conn. (US); and Dragos Ciuparu, New Haven, Conn. (US)
Assigned to Yale University, New Haven, Conn. (US)
Filed on Dec. 02, 2003, as Appl. No. 10/726,394.
Application 10/726394 is a continuation in part of application No. 10/328857, filed on Dec. 18, 2002, granted, now 7,357,983.
Claims priority of provisional application 60/341773, filed on Dec. 18, 2001.
Prior Publication US 2004/0247516 A1, Dec. 09, 2004
This patent is subject to a terminal disclaimer.
Int. Cl. D01F 9/12 (2006.01)

U.S. Cl. 423—447.1  [423/447.3; 977/842]

32 Claims

1. A method for producing a nanostructure with a specified diameter or cross-sectional area, comprising: specifying the diameter or cross-sectional area of the nanostructure; selecting a mesoporous siliceous framework having pores with a pore size that has a predetermined dimensional relationship with the diameter or cross-sectional area of the nanostructure, said mesoporous siliceous framework containing metal ions dispersed in substitutional sites and forming a source of catalytic sites; and contacting, in a reactor, the mesoporous siliceous framework with a reactant at a temperature sufficient to produce the nanostructures with the specified diameter or cross-sectional area.