| US 7,485,024 B2 | ||
| Fabricating method of field emission triodes | ||
| Fu-Ming Pan, Jhudong Township, Hsinchu County (Taiwan); Po-Lin Chen, Taipei (Taiwan); Chen-Chun Lin, Hsinchu (Taiwan); Mei Liu, Neipu Township, Pingtung County (Taiwan); and Chi-Neng Mo, Jhongli (Taiwan) | ||
| Assigned to Chunghwa Picture Tubes, Ltd., Taipei (Taiwan) | ||
| Filed on Oct. 12, 2005, as Appl. No. 11/249,954. | ||
| Prior Publication US 2007/0243787 A1, Oct. 18, 2007 | ||
| Int. Cl. H01J 9/00 (2006.01); H01J 9/24 (2006.01) | ||
| U.S. Cl. 445—24 [445/25; 205/175; 205/324; 257/E21.291] | 16 Claims |

| 1. A fabricating method for field emission triodes, comprising:
forming a cathode conductive layer, an insulator layer, and a gate layer on a substrate sequentially;
forming an opening in the gate layer and the insulator layer to expose a portion of the cathode conductive layer;
forming a metal layer on the exposed portion of the cathode conductive layer in the opening;
conducting a first anodization to the metal layer so as to form a first metal anodization layer from a portion of the metal
layer;
removing the first metal anodization layer for exposing the un-anodized metal layer;
conducting a second anodization to the un-anodized metal layer to form a second metal anodization layer, wherein a plurality
of through pores are formed in the second metal anodization layer in the opening;
forming a catalyst layer in the through pores; and
forming a plurality of carbon nanotubes inside the through pores, wherein each of the carbon nanotubes grows from the cathode
conductive layer in each of the through pores.
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