| US 7,484,513 B2 | ||
| Method of forming titanium film by CVD | ||
| Kunihiro Tada, Nirasaki (Japan); and Hayashi Otsuki, Naka-koma-gun (Japan) | ||
| Assigned to Tokyo Electron Limited, Tokyo (Japan) | ||
| Filed on Jan. 05, 2005, as Appl. No. 11/28,736. | ||
| Application 11/028736 is a division of application No. 10/216398, filed on Aug. 12, 2002, granted, now 6,841,203. | ||
| Application 10/216398 is a continuation in part of application No. 09/713008, filed on Nov. 16, 2000, granted, now 6,451,388. | ||
| Application 09/713008 is a continuation in part of application No. 09/216938, filed on Dec. 21, 1998, granted, now 6,177,149. | ||
| Claims priority of application No. 1997-366066 (JP), filed on Dec. 24, 1997. | ||
| Prior Publication US 2005/0136660 A1, Jun. 23, 2005 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 134—1.1 | 10 Claims |
| 1. A cleaning method for removing a film formed on a surface of a process vessel defining a film forming chamber or a surface
of a component member of a processing apparatus arranged in the film forming chamber, said method comprising the steps of:
evacuating a plasma generating chamber arranged remote from the film forming chamber to a predetermined vacuum at a pressure
in a range of 0.1 to 20 Torr;
supplying cleaning gases including an inert gas, a fluorine-containing gas, and a chlorine-containing gas into the plasma
generating chamber;
applying microwaves to the cleaning gases via a slot antenna provided in the plasma generating chamber, thereby converting
the cleaning gases into plasma in the plasma generating chamber,
heating the surface of the process vessel or the surface of the component member to a predetermined temperature;
feeding the cleaning gases thus converted into plasma from the plasma generating chamber into the film forming chamber so
that the cleaning gases thus converted into plasma react with the film to decompose the film to produce a decomposition product;
and
discharging the decomposition product from the film forming chamber.
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