| US 7,484,280 B2 | ||
| Method for manufacturing a surface acoustic wave element having an interdigital transducer (IDT) electrode | ||
| Aritsugu Yajima, Matsumoto (Japan); Takamitsu Higuchi, Matsumoto (Japan); and Yoshikazu Kasuya, Sakata (Japan) | ||
| Assigned to Seiko Epson Corporation, Tokyo (Japan) | ||
| Filed on Jan. 17, 2007, as Appl. No. 11/624,092. | ||
| Claims priority of application No. 2006-012058 (JP), filed on Jan. 20, 2006. | ||
| Prior Publication US 2007/0169324 A1, Jul. 26, 2007 | ||
| Int. Cl. H01L 41/22 (2006.01) | ||
| U.S. Cl. 29—25.35 [29/830; 29/831; 29/832; 29/846; 29/847; 310/313 R] | 8 Claims |
| 1. A method for manufacturing a surface acoustic wave element having an interdigital transducer electrode formed on a semiconductor
substrate, comprising:
a) forming an insulation layer on a surface of an active side of the semiconductor substrate, said insulation layer having
a whole top surface;
b) forming a base layer on the whole surface of the insulation layer;
c) planarizing a surface of the base layer;
d) forming a piezoelectric member on the planarized surface of the base layer;
e) forming the interdigital transducer electrode on a surface of the piezoelectric member; and
f) forming a bank being higher than a height from the surface of the base layer to the surface of the interdigital transducer
electrode on a peripheral of the surface of the base layer, thereby surrounding the piezoelectric member with said bank.
|