| US 7,483,468 B2 | ||
| Multiple wavelengths semiconductor laser device | ||
| Akira Tanaka, Kanagawa-ken (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Minato-ku, Tokyo (Japan) | ||
| Filed on Jan. 26, 2007, as Appl. No. 11/627,516. | ||
| Claims priority of application No. 2006-018647 (JP), filed on Jan. 27, 2006. | ||
| Prior Publication US 2007/0177648 A1, Aug. 02, 2007 | ||
| Int. Cl. H01S 5/00 (2006.01) | ||
| U.S. Cl. 372—50.121 [372/50.12; 372/50.1] | 18 Claims |
| 1. A multiple wavelengths semiconductor laser device, comprising:
a supporting member;
a first semiconductor laser element provided on a first substrate, mounted on the supporting member as face up, and configured
to emit a first wavelength laser; and
a second semiconductor laser element provided on a second substrate which has lower heat conductivity ratio than the first
substrate, mounted on the supporting member as face down, and configured to emit a second wavelength laser in substantially
a same direction as the first wavelength laser,
wherein a height from the supporting member to an emission region of the first semiconductor laser element is greater than
a height from the supporting member to an emission region of the second semiconductor laser element.
|