| US 7,483,461 B2 | ||
| Semiconductor laser diode with a plurality of optical guiding layers | ||
| Noriaki Kaida, Yokohama (Japan) | ||
| Assigned to Sumitomo Electric Industries, Ltd., Osaka (Japan) | ||
| Filed on Apr. 26, 2007, as Appl. No. 11/790,686. | ||
| Claims priority of application No. 2006-125940 (JP), filed on Apr. 28, 2006. | ||
| Prior Publication US 2007/0258497 A1, Nov. 08, 2007 | ||
| Int. Cl. H01S 5/00 (2006.01) | ||
| U.S. Cl. 372—43.01 [372/45.01] | 10 Claims |
| 1. A semiconductor laser diode, comprising:
an active layer;
an n-type cladding layer made of a first group III-V compound semiconductor material;
a first guiding layer provided between the active layer and the n-type cladding layer, the first guiding layer being made
of AlGaInAs with a first band gap wavelength and a first conduction band level; and
a second guiding layer provided between the first guiding layer and the active layer, the second guiding layer being made
of a second group III-V compound semiconductor material with a second band gap wavelength and a second conduction band level
lower than the first conduction band level in the first guiding layer, the first band gap wavelength of the first guiding
layer being shorter than the second band gap wavelength,
wherein the first guiding layer is a p-type layer.
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