a wide common mode differential amplifier receiving differential input signals and providing amplified differential output signals;

a differential level shifter coupled to said wide common mode differential amplifier for providing voltage level shifted differential signals; said wide common mode differential amplifier and differential level shifter operating at the high voltage domain;

said differential level shifter including a first pair of first P-channel field effect transistors (PFETs) connected to the high voltage domain supply, each said first PFET of said first pair of PFETs being connected to the wide common mode differential amplifier and respectively receives a gate input of a respective one of said amplified differential output signals, each said first PFET connected in series with a respective first N-channel field effect transistor (NFET) between the high voltage domain supply and ground, and a gate of each said first NFET is cross connected to a common drain connection of the other series connected first PFET and first NFET; and a common drain connection of each said first PFET and said respective first NFET respectively providing a drain output of a respective one of said voltage level shifted differential signals;

a biased differential amplifier operating at the low voltage domain and coupled to said differential level shifter receiving said voltage level shifted differential signals and an enable signal for providing a biased output signal;

said biased differential amplifier including a second pair of second P-channel field effect transistors (PFETs) connected to the low voltage domain supply; each said second PFET of said second pair of PFETs having a gate input enabled responsive to said enable signal and each said second PFET of said second pair of PFETs being series connected with a respective second N-channel field effect transistor (NFET) between the low voltage domain supply and a voltage bias node;

said biased differential amplifier including a series-connected pair of third N-channel field effect transistors (NFETs) connected in series between said voltage bias node and ground; and a transistor stack including a series-connected third P-channel field effect transistor (PFET) and a fourth N-channel field effect transistors (NFET) and a parallel-connected pair of a fifth N-channel field effect transistor (NFET) and a sixth N-channel field effect transistor (NFET) connected in series between the low voltage domain supply and ground; said third P-channel field effect transistor (PFET) and said sixth N-channel field effect transistor (NFET) respectively receiving a gate input of an inverted enable signal; and said third N-channel field effect transistors (NFETs) respectively receiving a gate input of a source and drain connection of the series-connected third P-channel field effect transistor (PFET) and fourth N-channel field effect transistors (NFET) and of a source and drain connection of the series-connected fourth N-channel field effect transistors (NFET) and said fifth N-channel field effect transistors (NFET);

said respective second NFET having a gate connected to said respective common drain connection of each said first PFET and said respective first NFET of said differential level shifter; and a common drain connection of one of said second PFET; and

said respective second NFET of said biased differential amplifier providing the biased output signal responsive to said enable signal.