| US 7,482,685 B2 | ||
| Ceramic circuit board, method for making the same, and power module | ||
| Yoshiyuki Fukuda, Ayase (Japan); and Hiromasa Kato, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan); and Toshiba Materials Co., Ltd., Yokohama-shi (Japan) | ||
| Appl. No. 10/572,961 PCT Filed Sep. 27, 2004, PCT No. PCT/JP2004/014528 § 371(c)(1), (2), (4) Date Jan. 22, 2007, PCT Pub. No. WO2005/032225, PCT Pub. Date Apr. 07, 2005. |
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| Claims priority of application No. 2003-334190 (JP), filed on Sep. 25, 2003. | ||
| Prior Publication US 2007/0160858 A1, Jul. 12, 2007 | ||
| Int. Cl. H01L 23/15 (2006.01); H01L 23/06 (2006.01); H01L 23/10 (2006.01) | ||
| U.S. Cl. 257—703 [257/E23.009; 257/712; 257/706; 257/750; 428/469; 428/698; 228/121] | 13 Claims |
| 1. A ceramic circuit board prepared by a method that comprises integrally joining a circuit layer comprising a clad member
that comprises an Al plate and an Al—Si brazing material to a ceramic substrate, wherein a surface of said clad member adjacent
to the Al—Si brazing material is joined to said ceramic substrate with an Al alloy film therebetween, said Al alloy film having
a thickness of less than 1 μm and provided on the surface of the ceramic substrate, and
wherein said Al alloy film comprises at least one rare earth element selected from the group consisting of Y, Sc, La, Ce,
Nd, Sm, Gd, Tb, Dy, Er, Th, and Sr in an amount of 1 to 5 atomic percent.
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