| US 7,482,665 B2 | ||
| Photo diode and method for manufacturing same | ||
| Kye-won Maeng, Seoul (Korea, Republic of); and Sung-ryoul Bae, Suwon-si (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Apr. 01, 2005, as Appl. No. 11/95,482. | ||
| Claims priority of application No. 10-2004-0037330 (KR), filed on May 25, 2004. | ||
| Prior Publication US 2005/0263840 A1, Dec. 01, 2005 | ||
| Int. Cl. H01L 31/062 (2006.01) | ||
| U.S. Cl. 257—431 [257/292; 257/434; 257/437; 257/E31.079; 257/E31.084] | 7 Claims |
| 1. A photo diode, comprising:
a semiconductor substrate;
a buried layer of a first conductivity type, a first epitaxial layer of the first conductivity type, and a second epitaxial
layer of a second conductivity type sequentially provided on the semiconductor substrate;
a partition layer of the first conductivity type on the second epitaxial layer;
a doped shallow junction layer of the second conductivity type on adjacent sides of the partition layer;
a layered structure comprising an oxide film pattern and a silicon nitride film pattern sequentially provided only on the
doped shallow junction layer;
an interlayer dielectric film and an inter-metal dielectric film provided on the silicon nitride film pattern to define a
light receiving portion; and
a dielectric film provided on the inter-metal dielectric film;
wherein the dielectric film, the silicon nitride film pattern, and the oxide film pattern form a multi-layered anti-reflective
coating.
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