| US 7,482,660 B2 | ||
| Nonvolatile semiconductor memory with transistor whose gate electrode has bird's beak | ||
| Kanji Osari, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jul. 13, 2006, as Appl. No. 11/485,370. | ||
| Claims priority of application No. 2005-207671 (JP), filed on Jul. 15, 2005. | ||
| Prior Publication US 2007/0012990 A1, Jan. 18, 2007 | ||
| Int. Cl. H01L 29/76 (2006.01) | ||
| U.S. Cl. 257—393 [257/900; 257/315; 257/E21.626; 438/265; 438/283] | 7 Claims |
| 1. A nonvolatile semiconductor memory comprising:
a memory cell having a floating gate electrode and a control gate electrode; and
a select gate transistor having a select gate electrode and connected to the memory cell in series,
wherein a bird's beak of an edge at the memory cell side of the select gate electrode is larger than a bird's beak of at least
one edge of the floating gate electrode,
wherein the bird's beak of the edge at the memory cell side of the select gate electrode is larger than the bird's beak of
the edge at an opposite side to the memory cell of the select gate electrode.
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