| US 7,482,646 B2 | ||
| Image sensor | ||
| Wenyu Gao, Suzhou (China); and Cedric Lee, Hsinchu (Taiwan) | ||
| Assigned to Hejian Technology (Suzhou) Co., Ltd., Suzhou (China) | ||
| Filed on Oct. 18, 2006, as Appl. No. 11/550,417. | ||
| Prior Publication US 2008/0093695 A1, Apr. 24, 2008 | ||
| Int. Cl. H01L 31/062 (2006.01) | ||
| U.S. Cl. 257—292 [257/458] | 13 Claims |
| 1. An image sensor, comprising:
a substrate having a plurality of semiconductor devices formed thereon;
an interconnection layer disposed on the substrate; and
a plurality of isolated photo-diodes embedded in the interconnection layer, wherein the isolated photo-diodes are located
above the semiconductor devices and electrically connected to the semiconductor devices through the interconnection layer.
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