| US 7,482,625 B2 | ||
| Composition for thermosetting organic polymeric gate insulating layer and organic thin film transistor using the same | ||
| Gi Heon Kim, Seo-gu Daejeon (Korea, Republic of); Sung Min Yoon, Daejeon (Korea, Republic of); In Kyu You, Daejeon (Korea, Republic of); Seung Youl Kang, Daejeon (Korea, Republic of); Seong Deok Ahn, Daejeon (Korea, Republic of); Kyu Ha Baek, Daejeon (Korea, Republic of); and Kyung Soo Suh, Daejeon (Korea, Republic of) | ||
| Assigned to Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of) | ||
| Filed on Aug. 16, 2005, as Appl. No. 11/204,693. | ||
| Claims priority of application No. 10-2004-0091257 (KR), filed on Nov. 10, 2004. | ||
| Prior Publication US 2006/0097249 A1, May 11, 2006 | ||
| Int. Cl. H01L 51/30 (2006.01); C07C 281/06 (2006.01); C07D 251/54 (2006.01) | ||
| U.S. Cl. 257—40 [257/E51.007; 544/196; 564/34] | 12 Claims |
| 1. An organic thin film transistor comprising:
a substrate;
a gate electrode;
a thermosetting organic polymeric gate insulating layer comprising polyvinyl phenol represented by the following Formula I
and a thermosetting material of 0.1 wt % or more based on weight of polyvinyl phenol:
 where n is 10 or more
wherein the thermosetting material having the following structure:
 an organic active layer; and
source and drain electrodes.
|