| US 7,482,604 B2 | ||
| Electron beam lithography apparatus, lithography method, lithography program, and manufacturing method of a semiconductor device | ||
| Tetsuro Nakasugi, Yokohama (Japan); Noriaki Sasaki, Yokohama (Japan); Takeshi Koshiba, Yokohama (Japan); and Takumi Ota, Kawasaki (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on May 09, 2006, as Appl. No. 11/430,044. | ||
| Claims priority of application No. 2005-137422 (JP), filed on May 10, 2005. | ||
| Prior Publication US 2006/0289805 A1, Dec. 28, 2006 | ||
| Int. Cl. G21G 5/00 (2006.01) | ||
| U.S. Cl. 250—492.22 [250/492.1; 250/492.2; 250/492.3; 250/493.1; 250/396 R; 430/30; 430/296; 438/463] | 20 Claims |
| 1. An electron beam lithography apparatus comprising:
a first setting unit configured to set a drawing position on a semiconductor substrate based on layout information of the
semiconductor substrate;
a second setting unit configured to set a valid range on the semiconductor substrate based on shape information of the semiconductor
substrate;
a determination unit configured to determine whether or not the drawing position falls within the valid range; and
an irradiation unit configured to irradiate the semiconductor substrate with an electron beam when the determination unit
determines that the drawing position falls within the valid range.
|