| US 7,482,570 B2 | ||
| Solid-state imaging device | ||
| Ikuko Inoue, Kanagawa-ken (Japan); Hirofumi Yamashita, Kanagawa-ken (Japan); and Hidetoshi Nozaki, Kanagawa-ken (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jul. 19, 2007, as Appl. No. 11/826,927. | ||
| Application 11/826927 is a division of application No. 10/287707, filed on Nov. 05, 2002, granted, now 7,262,396. | ||
| Claims priority of application No. P2001-342290 (JP), filed on Nov. 07, 2001. | ||
| Prior Publication US 2007/0262241 A1, Nov. 15, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 27/00 (2006.01) | ||
| U.S. Cl. 250—208.1 [250/214.1; 257/443; 348/73] | 22 Claims |
| 1. A system for performing an operation utilizing a sensed image, the system comprising a solid-state imaging device, the
device including:
a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric
conversion unit comprising a photodiode having a diffusion layer of a second conductivity type;
a trench isolation region for isolating the photoelectric conversion unit, the trench isolation region being formed in the
semiconductor substrate; and
a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation
region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
|