| US 7,482,286 B2 | ||
| Method for forming dielectric or metallic films | ||
| Ashutosh Misra, Plano, Tex. (US); Matthew Fisher, Allen, Tex. (US); Benjamin Jurcik, Richardson, Tex. (US); Christian Dussarrat, Tsukuba (Japan); Eri Tsukada, Ibaraki (Japan); and Jean-Marc Girard, Paris (France) | ||
| Assigned to L'Air Liquide, Societe Anonyme A Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procedes Georges Claude, Paris (France) | ||
| Appl. No. 10/591,629 PCT Filed Feb. 24, 2005, PCT No. PCT/IB2005/000522 § 371(c)(1), (2), (4) Date Sep. 05, 2006, PCT Pub. No. WO2005/093126, PCT Pub. Date Oct. 06, 2005. |
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| Claims priority of application No. 2004-193710 (JP), filed on Jun. 30, 2004. | ||
| Prior Publication US 2007/0190807 A1, Aug. 16, 2007 | ||
| Int. Cl. H01L 21/469 (2006.01); H01L 21/8242 (2006.01); H01L 21/31 (2006.01); H01L 21/38 (2006.01); H01L 21/22 (2006.01); H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—778 [438/240; 438/287; 438/477; 438/565; 438/623; 438/778; 438/786; 438/791; 438/792; 438/907; 257/E21.274] | 19 Claims |
| 1. A method for forming a MSiN dielectric film comprising the steps of:
a) vaporizing a metal source (M) to form a vaporized metal source;
b) providing a vapor phase silicon source, wherein said silicon source has a vapor pressure of at least 50 torr at about 20°
C.;
c) feeding a plurality of precursors to a deposition device having a substrate disposed therein, wherein said precursors comprise
said vaporized metal source, said silicon source, and a nitrogen source; wherein said nitrogen source and said silicon source
comprise respective molecular structures absent carbon; and
d) forming the MSiN dielectric film on the substrate, wherein said dielectric film is formed from the said precursors in a
single step such that the MSiN dielectric film is fully formed absent a post deposition step.
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