| US 7,482,265 B2 | ||
| UV curing of low-k porous dielectrics | ||
| I-I Chen, Taipei (Taiwan); Tien-I Bao, Hsin-Chu (Taiwan); Shwang-Ming Cheug, Hsin-Chu (Taiwan); and Chen-Hua Yu, Hsin-Chu (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (Taiwan) | ||
| Filed on Jan. 10, 2006, as Appl. No. 11/328,596. | ||
| Prior Publication US 2007/0161230 A1, Jul. 12, 2007 | ||
| Int. Cl. H01L 21/469 (2006.01) | ||
| U.S. Cl. 438—637 [438/781; 438/788; 438/790; 257/E21.581; 427/515] | 19 Claims |
| 1. A method of forming a low-k dielectric layer, the method comprising:
a first step comprising forming a layer on a substrate, wherein the layer comprises a pore generating material dispersed in
an uncured matrix;
a second step comprising forming pores in the uncured matrix by irradiating the layer with radiation having a first wavelength;
and
a third step comprising irradiating the layer with radiation having a second wavelength, wherein the first wavelength is larger
than the second wavelength.
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