| US 7,479,686 B2 | ||
| Backside imaging through a doped layer | ||
| Kenneth A Costello, Alameda County, Calif. (US); Kevin P. Fairbairn, Santa Clara County, Calif. (US); David W. Brown, Alameda County, Calif. (US); Yun Chung, Santa Clara County, Calif. (US); Patricia Gober, Santa Clara County, Calif. (US); and Edward Yin, Santa Clara County, Calif. (US) | ||
| Assigned to Intevac, Inc., Santa Clara, Calif. (US) | ||
| Filed on Nov. 30, 2005, as Appl. No. 11/290,384. | ||
| Application 11/290384 is a division of application No. 10/795041, filed on Mar. 05, 2004, granted, now 7,005,637. | ||
| Application 10/795041 is a continuation in part of application No. 10/355838, filed on Jan. 31, 2003, abandoned. | ||
| Prior Publication US 2006/0138322 A1, Jun. 29, 2006 | ||
| Int. Cl. H01L 31/00 (2006.01) | ||
| U.S. Cl. 257—443 [257/460; 257/E31.053; 250/338.4] | 7 Claims |
| 1. The method of sensing an image projected on the rear surface of a back illuminated semiconductor pixel array, comprising
forming a P-doped layer of selected thickness on said rear surface to achieve a desired conductivity therein, whereby a conduction
band potential barrier is created, said P-doped layer incorporating a doping ramp to accelerate electrons toward said semiconductor
pixel array,
preparing a flux distribution of electrons corresponding to said image,
accelerating said electrons of said flux distribution to a selected energy,
intercepting said electrons on said P-doped layer of semiconductor,
generating within said P-doped layer a plurality of electron-hole pairs for each said selected energy electron,
collecting said generated electrons at pixels correspondingly proximate each said generated electron-hole pair, whereby said
pixel array contains information comprising said image.
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