US 7,479,685 B2
	Electronic device on substrate with cavity and mitigated parasitic leakage path
R. Shane Fazzio, Loveland, Colo. (US); Richard C. Ruby, Menlo Park, Calif. (US); Christopher P. Wade, Los Gatos, Calif. (US); Michael Louis Frank, Menlo Park, Calif. (US); and David A. Feld, Newark, Calif. (US)
Assigned to Avago Technologies General IP (Singapore) Pte. Ltd., Singapore (Singapore)
Filed on Mar. 10, 2006, as Appl. No. 11/373,434.
Prior Publication US 2007/0236310 A1, Oct. 11, 2007
Int. Cl. H01L 29/78 (2006.01)

U.S. Cl. 257—416  [257/245; 333/187; 310/311; 310/324; 310/348]

7 Claims

1. A thin film bulk acoustic resonator, comprising: a first electrode, wherein the thin film bulk acoustic resonator is fabricated on a substrate and wherein the substrate has a cavity created in a top surface of the substrate; a piezoelectric layer overlying at least part of the first electrode; a second electrode overlying at least part of the piezoelectric layer; a coating layer comprising multiple layers, comprising: a first layer comprising silicon dioxide that overlays at least a part of the substrate surface in the cavity and a second layer comprising aluminum nitride that overlays at least part of the first layer, wherein the coating layer coats at least part of a substrate surface in the cavity.