| US 7,479,361 B2 | ||
| Chemically amplified resist composition, process for manufacturing semiconductor device and patterning process | ||
| Seiji Nagahara, Kawasaki (Japan); and Masayuki Hiroi, Kawasaki (Japan) | ||
| Assigned to Nec Electronics Corporation, Kanagawa (Japan) | ||
| Filed on Jun. 17, 2004, as Appl. No. 10/868,968. | ||
| Claims priority of application No. 2003-176736 (JP), filed on Jun. 20, 2003. | ||
| Prior Publication US 2004/0259373 A1, Dec. 23, 2004 | ||
| Int. Cl. G03F 7/00 (2006.01) | ||
| U.S. Cl. 430—270.1 [430/286.1; 430/330] | 7 Claims |
| 1. A chemically amplified resist composition comprising:
a base resin;
a photoacid generator which generates an acid by exposure; and
a salt exhibiting buffer effect in the base resin, wherein said salt exhibiting buffer effect generates an acid-base pair
in a resist composition without neutralizing the acid generated by the photoacid generator and behaves as if it is a buffer.
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