| US 7,479,325 B2 | ||
| Isotope-doped carbon nanotube | ||
| Shou-Shan Fan, Beijing (China); and Liang Liu, Beijing (China) | ||
| Assigned to Tsinghua University, Beijing (China); and Hon Hai Precision Industry Co., Ltd., Tu-Cheng, Taipei Hsien (Taiwan) | ||
| Filed on Sep. 28, 2007, as Appl. No. 11/904,958. | ||
| Application 11/904958 is a division of application No. 11/118588, filed on Apr. 29, 2005. | ||
| Prior Publication US 2008/0026168 A1, Jan. 31, 2008 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. B32B 5/16 (2006.01) | ||
| U.S. Cl. 428—403 [977/742; 977/745; 977/762; 977/773; 977/777] | 8 Claims |
| 1. An isotope-doped nanotube of an element, comprising:
an elongated tube structure including a first nanotube segment made of first isotopes of said element, and a second nanotube
segment made of second isotopes of said element, the first and second nanotube segments selectively occurring along an axial
direction of said elongated tube structure.
|