| US 7,477,567 B2 | ||
| Memory storage device with heating element | ||
| David W. Abraham, Croton-on-Hudson, N.Y. (US); and Philip L. Trouilloud, Norwood, N.J. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Jul. 08, 2003, as Appl. No. 10/615,147. | ||
| Application 10/615147 is a continuation of application No. 10/128838, filed on Apr. 23, 2002, granted, now 6,724,674. | ||
| Application 10/128838 is a continuation in part of application No. 09/708253, filed on Nov. 08, 2000, granted, now 6,385,082. | ||
| Prior Publication US 2008/0304353 A1, Dec. 11, 2008 | ||
| Int. Cl. G11C 8/00 (2006.01) | ||
| U.S. Cl. 365—230.07 [365/211; 365/97; 365/173] | 37 Claims |
| 1. A method for writing to a memory storage device comprising:
a) providing a storage cell comprising a changeable magnetic region, said changeable magnetic region comprising a material
having a magnetization state that is responsive to a change in temperature thereof; and
b) heating an element of said storage cell for selectively changing the temperature of said changeable magnetic region of
said storage cell;
c) said heating said element is provided by passing an electric current therethrough.
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