| US 7,477,003 B2 | ||
| Bimorph element, bimorph switch, mirror element, and method for manufacturing these | ||
| Fumikazu Takayanagi, Tokyo (Japan); and Hirokazu Sanpei, Tokyo (Japan) | ||
| Assigned to Advantest Corporation, Tokyo (Japan) | ||
| Filed on Mar. 01, 2007, as Appl. No. 11/681,038. | ||
| Application 11/681038 is a continuation of application No. PCT/JP2005/015928, filed on Aug. 31, 2005. | ||
| Claims priority of application No. 2004-254810 (JP), filed on Sep. 01, 2004. | ||
| Prior Publication US 2007/0194656 A1, Aug. 23, 2007 | ||
| Int. Cl. H01L 41/08 (2006.01) | ||
| U.S. Cl. 310—330 [310/331] | 8 Claims |
| 1. A bimorph element comprising:
a silicon oxide layer;
a high expansion coefficient layer that is formed on the silicon oxide layer and has a thermal expansion coefficient higher
than a thermal expansion coefficient of the silicon oxide layer; and
a deformation preventing film that is formed by depositing silicon oxide under plasma CVD using energy higher than that used
in the silicon oxide layer forming step and covers a surface of the silicon oxide layer and prevents the silicon oxide layer
from being deformed over time.
|