| US 7,476,951 B2 | ||
| Selective isotropic etch for titanium-based materials | ||
| Timothy S. Campbell, Gotha, Fla. (US); Daniel P. Chesire, Winter Garden, Fla. (US); Kelly Hinckley, Orlando, Fla. (US); Gregory A. Head, Orlando, Fla. (US); and Benu B. Patel, Orlando, Fla. (US) | ||
| Assigned to Agere Systems Inc., Allentown, Pa. (US) | ||
| Filed on Mar. 06, 2006, as Appl. No. 11/368,780. | ||
| Prior Publication US 2006/0226553 A1, Oct. 12, 2006 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 29/84 (2006.01); C23C 1/001 (2006.01) | ||
| U.S. Cl. 257—415 [216/2] | 15 Claims |
| 1. A structure comprising a plurality of material layers in stacked relation comprising:
a first material layer;
a sacrificial layer selected from among titanium, titanium-nitride, a titanium compound, and a titanium alloy;
a second material; and
the first material layer defining an opening therein extending at least through the sacrificial layer, wherein an etchant
introduced into the opening removes at least a portion of the sacrificial layer exposed on sidewalls of the opening such that
remaining portions of the sacrificial layer are laterally disposed relative to the opening.
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