| US 7,476,937 B2 | ||
| Semiconductor device and method of fabricating the same | ||
| Ritsuko Kawasaki, Machida (Japan); Kenji Kasahara, Tsukuba (Japan); and Hisashi Ohtani, Tochigi (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (Japan) | ||
| Filed on Jul. 24, 2003, as Appl. No. 10/625,904. | ||
| Application 10/625904 is a division of application No. 09/640077, filed on Aug. 17, 2000, granted, now 6,599,788. | ||
| Claims priority of application No. 11-231281 (JP), filed on Aug. 18, 1999. | ||
| Prior Publication US 2004/0140470 A1, Jul. 22, 2004 | ||
| Int. Cl. H01L 29/04 (2006.01) | ||
| U.S. Cl. 257—347 [257/72; 257/353; 257/E29.151; 257/E29.275; 257/E29.279; 257/E21.293; 438/149] | 16 Claims |
| 1. A semiconductor device comprising:
a light-transmitting substrate;
a base film having first and second projections, the film being formed over one surface of the light-transmitting substrate;
a first island-like semiconductor layer having a crystal structure entirely covering the first projection and extending over
a pair of edges of the first projection;
a gate insulating film over the first island-like semiconductor layer;
a gate electrode over the gate insulating film;
a second island like semiconductor layer having a first portion covering the second projection and a second portion not covering
the second projection; and
a capacitor comprising the second portion.
|