| US 7,476,910 B2 | ||
| Semiconductor light emitting device and method for manufacturing the same | ||
| Akira Fujimoto, Kawasaki (Japan); Koji Asakawa, Tokyo (Japan); and Kenichi Ohashi, Kawasaki (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Sep. 08, 2005, as Appl. No. 11/220,637. | ||
| Claims priority of application No. 2004-263741 (JP), filed on Sep. 10, 2004. | ||
| Prior Publication US 2006/0056474 A1, Mar. 16, 2006 | ||
| Int. Cl. H01L 29/06 (2006.01) | ||
| U.S. Cl. 257—95 [257/94; 257/79; 257/13; 257/98] | 12 Claims |
| 1. A semiconductor light emitting device comprising:
a semiconductor light emitting element including a light extracted surface on which a plurality of convex structures are formed;
the convex structures each including a conical mesa portion, a cylindrical portion, and a conical portion, said mesa portion,
the cylindrical portion, and the conical portion being arranged in this order from the light extracted surface toward exterior,
a period between the convex structures being longer than 1/(a refractive index of an external medium+a refractive index of
the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength, and a circle-equivalent
average diameter of the cylindrical portion being ⅓ to 9/10 of that of a bottom of the mesa portion.
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