| US 7,476,901 B2 | ||
| Poly-silicon thin film transistor array substrate and method for fabricating the same | ||
| Kum Mi Oh, Seoul (Korea, Republic of) | ||
| Assigned to LG Display Co., Ltd., Seoul (Korea, Republic of) | ||
| Filed on Dec. 27, 2006, as Appl. No. 11/645,770. | ||
| Claims priority of application No. 10-2006-0042754 (KR), filed on May 12, 2006. | ||
| Prior Publication US 2007/0262317 A1, Nov. 15, 2007 | ||
| Int. Cl. H01L 29/04 (2006.01) | ||
| U.S. Cl. 257—72 [257/59; 257/E29.285; 438/486] | 28 Claims |
| 1. A poly-silicon thin film transistor array substrate comprising:
a gate line and a gate electrode over a substrate;
a semiconductor layer having source/drain regions doped with impurity ions;
a data line crossing the gate line, and source/drain electrodes connected to the source/drain regions; and
a pixel electrode connected to the drain electrode,
wherein the semiconductor layer is poly-silicon except for an amorphous silicon region below the gate line.
|