| US 7,476,878 B2 | ||
| Techniques for reducing effects of photoresist outgassing | ||
| Russell J. Low, Rowley, Mass. (US); Jonathan Gerald England, Horsham (United Kingdom); Stephen E. Krause, Ipswich, Mass. (US); and Eric D. Hermanson, Georgetown, Mass. (US) | ||
| Assigned to Varian Semiconductor Equipment Associates, Inc., Gloucester, Mass. (US) | ||
| Filed on Dec. 06, 2006, as Appl. No. 11/567,522. | ||
| Claims priority of provisional application 60/748068, filed on Dec. 07, 2005. | ||
| Prior Publication US 2007/0125957 A1, Jun. 07, 2007 | ||
| Int. Cl. H01J 37/317 (2006.01) | ||
| U.S. Cl. 250—492.21 | 23 Claims |
| 1. An apparatus for reducing effects of photoresist outgassing in an ion implanter, the apparatus comprising:
a drift tube located between an end-station and an upstream beamline component;
a first variable aperture between the drift tube and the end-station; and
a second variable aperture between the drift tube and the upstream beamline component;
wherein the first variable aperture and the second variable aperture can be adjusted to facilitate differential pumping.
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