| US 7,476,619 B2 | ||
| Semiconductor device | ||
| Eiichi Kondoh, 472-51, Nakashimojo, Shikishima-Machi, Nakokoma-Gun, Yamanashi 400-0124 (Japan); Vincent Vezin, Kyoto (Japan); Kenichi Kubo, Kofu (Japan); Yoshinori Kureishi, Fuchu (Japan); and Tomohiro Ohta, Nirasaki (Japan) | ||
| Assigned to Tokyo Electron Limited, Tokyo (Japan); and Eiichi Kondoh, Nakakoma-Gun (Japan) | ||
| Appl. No. 10/543,378 PCT Filed Dec. 26, 2003, PCT No. PCT/JP03/16990 § 371(c)(1), (2), (4) Date Jul. 26, 2005, PCT Pub. No. WO2004/095557, PCT Pub. Date Nov. 04, 2004. |
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| Claims priority of application No. 2003-017948 (JP), filed on Jan. 27, 2003. | ||
| Prior Publication US 2006/0154482 A1, Jul. 13, 2006 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—687 [438/677; 438/658; 257/E21.48; 257/E21.478; 427/377] | 21 Claims |
| 1. A substrate processing method comprising:
a first step of processing a substrate by supplying a first processing medium containing a first medium of a supercritical
state onto the substrate;
a second step of forming a Cu diffusion preventing film on the substrate by supplying a second processing medium containing
a second medium of a supercritical state onto the substrate; and
a third step of forming a Cu film on the substrate by supplying a third processing medium containing a third medium of a supercritical
state onto the substrate,
wherein the second processing medium is made by adding a precursor compound containing Ta to the second medium of the supercritical
state, and the precursor compound containing Ta is chosen from a group including TaF5, TaCl5, TaBr5, and TaI5.
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