| US 7,476,604 B1 | ||
| Aggressive cleaning process for semiconductor device contact formation | ||
| Ning Cheng, San Jose, Calif. (US); Minh Van Ngo, Fremont, Calif. (US); Jinsong Yin, Sunnyvale, Calif. (US); Paul Raymond Besser, Sunnyvale, Calif. (US); Connie Pin-chin Wang, Menlo Park, Calif. (US); Russell Rosaire Austin Callahan, Dresden (Germany); Jeffrey Shields, Sunnyvale, Calif. (US); Shankar Sinha, Redwood Shores, Calif. (US); Jeff P. Erhardt, San Jose, Calif. (US); and Jeremy Chi-Hung Chou, San Jose, Calif. (US) | ||
| Assigned to Advanced Micro Devices, Inc., Sunnyvale, Calif. (US); and Spansion LLC, Sunnyvale, Calif. (US) | ||
| Filed on May 13, 2005, as Appl. No. 11/128,391. | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—597 [438/677; 257/E21.294; 257/E21.495; 257/E21.575] | 8 Claims |
| 1. A method of forming a contact, comprising:
forming a via through a dielectric material;
cleaning the via using a dilute hydrofluoric (DHF) acid solution and at least one of an ammonium hydroxide hydrogen peroxide
mix (APM) or a sulfuric acid hydrogen peroxide mix (SPM),
wherein a concentration of HF to H2O within the DHF acid solution ranges from about 10:1 to about 500:1, wherein a concentration of NH4OH/H2O2/H2O in the APM ranges from about 1:1.2:8 to about 1:2.5:12 and wherein a concentration of H2SO4/H2O2 in the SPM ranges from about 1:1 to about 5:1;
depositing a barrier layer within the via; and
depositing metal adjacent the barrier layer.
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