| US 7,476,577 B2 | ||
| Semiconductor device and method of fabricating the same | ||
| Shunpei Yamazaki, Tokyo (Japan); Taketomi Asami, Kanagawa (Japan); Toru Takayama, Kanagawa (Japan); Ritsuko Kawasaki, Kanagawa (Japan); Hiroki Adachi, Kanagawa (Japan); Naoya Sakamoto, Kanagawa (Japan); Masahiko Hayakawa, Kanagawa (Japan); Hiroshi Shibata, Kanagawa (Japan); and Yasuyuki Arai, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., (Japan) | ||
| Filed on Oct. 17, 2006, as Appl. No. 11/582,471. | ||
| Application 10/684936 is a division of application No. 10/093313, filed on Mar. 07, 2002, granted, now 6,645,826, filed on Nov. 11, 2003. | ||
| Application 10/093313 is a division of application No. 09/472137, filed on Dec. 23, 1999, granted, now 6,380,558, filed on Apr. 30, 2002. | ||
| Application 11/582471 is a continuation of application No. 11/298378, filed on Dec. 08, 2005, granted, now 7,132,686, filed on Nov. 07, 2006. | ||
| Application 11/298378 is a continuation of application No. 10/684936, filed on Oct. 14, 2003, granted, now 7,015,505, filed on Mar. 21, 2006. | ||
| Claims priority of application No. 10-377418 (JP), filed on Dec. 29, 1998; and application No. 11-008494 (JP), filed on Jan. 14, 1999. | ||
| Prior Publication US 2007/0034870 A1, Feb. 15, 2007 | ||
| Int. Cl. H01L 21/66 (2006.01); H01L 21/00 (2006.01); H01L 21/20 (2006.01) | ||
| U.S. Cl. 438—151 [438/479; 438/27; 438/163; 257/E21.438; 257/E21.619] | 24 Claims |
| 1. A method of fabricating a semiconductor device, comprising:
forming a first insulating film over a substrate;
forming a second insulating film over the first insulating film;
forming a semiconductor island comprising crystalline silicon by a crystallizing method using a catalytic element over the
second insulating film;
forming a third insulating film over the semiconductor island;
forming source and drain regions including phosphorus in the semiconductor island with a channel formation region therebetween;
and
performing a heat treatment for reducing a concentration of the catalytic element in the channel formation region, wherein
the heat treatment is performed for segregating the catalytic element into the source and drain regions,
wherein the first insulating film includes nitrogen at a first concentration,
wherein the second insulating film includes nitrogen at a second concentration,
wherein the third insulating film includes nitrogen at a third concentration, and
wherein the first concentration is higher than each of the second concentration and the third concentration.
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