| US 7,476,552 B2 | ||
| Method of reworking a semiconductor structure | ||
| Axel Preusse, Radebeul (Germany); Uwe Gunter Stoeckgen, Dresden (Germany); and Markus Nopper, Dresden (Germany) | ||
| Assigned to Advanced Micro Devices, Inc., Austin, Tex. (US) | ||
| Filed on Oct. 11, 2005, as Appl. No. 11/247,369. | ||
| Claims priority of application No. 10 2005 009 073 (DE), filed on Feb. 28, 2005. | ||
| Prior Publication US 2006/0194349 A1, Aug. 31, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—4 [438/17] | 18 Claims |
| 1. A method of forming a semiconductor structure, comprising:
providing a substrate comprising at least one electrical element comprising at least two conductive elements designed to be
electrically isolated from each other;
forming a cap layer comprising a metal compound over said at least one electrical element;
detecting whether a portion of the cap layer was formed between said at least two conductive elements so that a malfunction
occurred in said formation of said cap layer; and
removing said cap layer if a malfunction of said formation of said cap layer was detected.
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