US 7,476,413 B2
	Low magnetization materials for high performance magnetic memory devices
David W. Abraham, Croton-on-Hudson, N.Y. (US)
Assigned to International Business Machines Corporation, Armonk, N.Y. (US)
Filed on Apr. 19, 2005, as Appl. No. 11/108,983.
Application 11/108983 is a division of application No. 10/733676, filed on Dec. 11, 2003, granted, now 7,026,673.
Prior Publication US 2005/0185458 A1, Aug. 25, 2005
Int. Cl. B05D 5/12 (2006.01)

U.S. Cl. 427—130  [427/131; 257/295; 257/421]

1 Claim

1. A method of producing a magnetic memory device having one or more free magnetic layers comprising the step of tuning the saturation magnetization of the one or more free magnetic layers to have a saturation magnetization of less than or equal to about 600 electromagnetic units per cubic centimeter by inclusion of a moment-reducing element, wherein the moment-reducing element is selected from the group consisting of germanium, boron, vanadium, molybdenum, osmium and combinations comprising at least one of the foregoing elements, and wherein the tuning step comprises maximizing a thickness of the one or more free magnetic layers given a reasonably attainable switching field, wherein the reasonably attainable switching field is less than or equal to about 60 oersteds, and wherein the tuning step further comprises configuring the device such that a ratio of mean switching field associated with an array of non-interacting magnetic memory devices and a standard deviation of the switching field is greater than or equal to about 20.